VS-100BGQ100 www.vishay.com vishay semiconductors revision: 17-jun-11 1 document number: 94581 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 100 a features ? 175 c max. operatin g junction temperature ? high frequency operation ? low forward voltage drop ? continuous high current operation ? guard ring for enhanced ruggedness and long term reliability ? screw mounting only ? designed and qualified according to jedec-jesd47 ? powertab ? package ? compliant to rohs directive 2002/95/ec description the VS-100BGQ100 schottky rectifier has been optimized for low reverse leakage at high temperature. the proprietary barrier tech nology allows for reliable operation up to 175 c ju nction tempera ture. typical applications are in switchin g power supplies, converters, reverse battery protecti on, and redundant power subsystems. product summary package powertab ? i f(av) 100 a v r 100 v v f at i f 0.82 v i rm 180 ma at 125 c t j max. 175 c diode variation single die e as 9 mj cathode anode powertab ? major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 100 a t c 124 c v rrm 100 v i fsm t p = 5 s sine 6300 a v f 100 a pk (typical) 0.77 v t j 125 c t j range - 55 to 175 c voltage ratings parameter symbol 100bgq100 units maximum dc reverse voltage v r 100 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 124 c, rectan gular waveform 100 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 6300 a 10 ms sine or 6 ms rect. pulse 800 non-repetitive avalanche energy e as t j = 25 c, i as = 2 a, l = 4.5 mh 9 mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 2a
VS-100BGQ100 www.vishay.com vishay semiconductors revision: 17-jun-11 2 document number: 94581 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units typ. max. forward voltage drop v fm (1) 50 a t j = 25 c 0.83 0.86 v 100 a 1.01 1.08 50 a t j = 125 c 0.66 0.7 100 a 0.77 0.82 reverse leakage current i rm (1) t j = 25 c v r = rated v r 22 300 a t j = 125 c 14 18 ma maximum junction capacitance c t v r = 5 v dc , (test signal range 100 khz to 1 mhz) 25 c 1320 pf typical series inductance l s measured from tab to mounting plane 3.5 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 0.50 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.30 approximate weight 5g 0.18 oz. mounting torque minimum 1.2 (10) n m (lbf in) maximum 2.4 (20) marking device case style powertab ? 100bgq100
VS-100BGQ100 www.vishay.com vishay semiconductors revision: 17-jun-11 3 document number: 94581 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics instantaneous forward current - i f (a) 0.0 0.5 1.0 1.5 2.0 1 10 100 1000 tj = 25c tj = 125c tj = 175c forward voltage drop - v fm (v) reverse current - i r (ma) reverse voltage - v r (v) 0 20406080100 0.0001 0.001 0.01 0.1 1 10 100 1000 75c 100c 50c 125c 150c 175c 25c 100 1000 10000 0 20406080100 r t junction capacitance - c (pf) reverse voltage - v (v) t = 25c j t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75
VS-100BGQ100 www.vishay.com vishay semiconductors revision: 17-jun-11 4 document number: 94581 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non- repetitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 20 40 60 80 100 120 140 160 60 80 100 120 140 160 180 dc square wave (d=0.50) 80% rated vr applied see note (1) average forward current - i f (av) (a) average power loss - (watts) 0306090120150 0 20 40 60 80 100 120 180 120 90 60 30 dc rms limit 100 1000 10000 10 100 1000 10000 fs m no n-rep etit ive s urge current - i (a) p at any rated load condition and with rated v applied fo l l o w i n g su r g e rrm square wave pulse duration - t (microsec) current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 25 v l irfp460 40hfl40s02
VS-100BGQ100 www.vishay.com vishay semiconductors revision: 17-jun-11 5 document number: 94581 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating 1 - vishay semiconductors product 3 - essential part number 4 - voltage code = v rrm device code 1 3 4 2 100 vs- bgq 100 links to related documents dimensions www.vishay.com/doc?95240 part marking information www.vishay.com/doc?95370 application note www.vishay.com/doc?95179
outline dimensions www.vishay.com vishay semiconductors revision: 08-jun-15 1 document number: 95240 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powertab ? dimensions in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 4.70 (0.19) 4.50 (0.18) 4.95 (0.19) 4.75 (0.18) 5.20 (0.20) 4.95 (0.19) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) 39.8 (1.56) 39.6 (1.55) 12.40 (0.48) 12.10 (0.47) 8.54 (0.34) 8.20 (0.32) 15.60 (0.61) 14.80 (0.58) 5.45 ref. (0.21 ref.) 1.30 (0.05) 1.10 (0.04) 3.09 (0.12) 3.00 (0.11) 1.35 (0.05) 1.20 (0.04) 0.60 (0.02) 0.40 (0.01) 12.20 (0.48) 12.00 (0.47) ? 4.20 (? 0.16) ? 4.00 (? 0.15) ? 4.20 (? 0.16) ? 4.00 (? 0.15) lead 1 lead 2 lead assignments lead 1 = cathode lead 2 = anode
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